Defect?Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers

The ability to dope transition metal dichalcogenides such as tungsten diselenide (WSe2) with magnetic atoms in a controlled manner has motivated intense research the aim of generating dilute semiconductors. In this work, semiconducting WSe2 monolayers, substitutionally doped vanadium atoms, are investigated using low-temperature luminescence and optoelectronic spectroscopy. V-dopants lead p-type doping character an impurity-related emission ?160 meV below neutral exciton, both which scale nominal percentage V-dopants. Measurements field-effect devices 0.3% V-doped demonstrate bipolar carrier tunability. monolayers display clear hysteresis transport measurements under illumination without illumination, whereas valley polarization excitons reveals nonlinear g-factor within experimental uncertainty. Hence, work on provides crucial insights concerning suitable characterization methods properties 2D materials.